Installation is intended for ion-chemical etching of the materials applied in production of microelectronics. Etching of products happens by bombing of a surface of products the ions and radicals of technological gas which are formed in the induction VCh-category by means of a source of ions of the high density (N 2 171 555 Russian Federation patent).
The hinged magnetic system in the form of two electromagnetic coils of big diameter is applied to increase in parameters of plasma.
Import chemically resistant turbomolecular Turbo-V 551 Navigator pump is used.
Barratron for measurement of vacuum in a working point.
Installation can be completed with the laser measuring instrument of thickness for measurement of depth of etching. The prototype of installation is applied (ERA-3M, ERA-4 not lock) to production of semiconductor lasers and light-emitting diodes on arsenide and nitride of gallium, and also to etching of SiO2, silicon, a poliimid, photoresist removal etc. in technology of microelectronics.
Installation can be applied also to plazmostimulirovanny sedimentation of dielectrics from a gas phase (SiO2, Si4N4).